Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate on complex integrated SiC ensure reproducibility, cut down cost, availability low-voltage technology for circuits is paramount importance. Here, we report scalable open state-of-the-art CMOS that addresses this need. An overview parameters, including MOSFET threshold voltage, subthreshold slope, slope factor, process transconductance, reported. Conventional digital analog ranging from inverters to 2-bit analog-to-digital converter, are First yield predictions both show great potential increasing amount devices future applications.